Hyung-Gon Kim

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory

Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong et al. · IEEE Journal of Solid-State Circuits · 2017 · 113 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

Dongku Kang, Woopyo Jeong, Chulbum Kim et al. · IEEE Journal of Solid-State Circuits · 2016 · 109 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Ki‐Tae Park, Jin-Man Han, Daehan Kim et al. · 2014 · 96 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

Dongku Kang, Woopyo Jeong, Chulbum Kim et al. · 2016 · 84 citations

Planar Nand, Engineering, Emerging Memory Technology +18

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

Chulbum Kim, Ji-Ho Cho, Woopyo Jeong et al. · 2017 · 84 citations

Hardware Security, 3D Ic Architecture, Electrical Engineering +15