Concepedia
Statistics
Publications
4
Citations
677
H-Index
Active since
2005
Affiliations
GlobalFoundries (Germany)(Current)
Fraunhofer Institute for Photonic Microsystems
Hochschule für Technik und Wirtschaft Dresden – University of Applied Sciences
J. Höntschel is an author at GlobalFoundries (Germany) specializing in semiconductor devices, electrical engineering, and engineering.
Publications per year
2005–2017
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Stefan Dünkel, Martin Trentzsch, Ralf P. Richter et al. · 2017 · 533 citations
Engineering, Computer Engineering, Electrical Engineering +12
Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
S. Flachowsky, Andy Wei, R. Illgen et al. · IEEE Transactions on Electron Devices · 2010 · 70 citations
Engineering, Electrical Engineering, Materials Science +17
Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies
L.T. Su, John Pellerin, Shih-Fen Huang et al. · 2005 · 63 citations
Engineering, Computer Engineering, Electrical Engineering +17
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
S. Flachowsky, R. Illgen, T. Herrmann et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 11 citations
1–4 of 4