H. Niiyama

High-performance 0.10- mu m CMOS devices operating at room temperature

M. Iwase, Tomohisa Mizuno, Masaru Takahashi et al. · IEEE Electron Device Letters · 1993 · 30 citations

Engineering, Electrical Engineering, Microelectronics +15

Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K

Akiko Ohata, H. Niiyama, Toru Shibata Toru Shibata et al. · Japanese Journal of Applied Physics · 1995 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

Inverter performance of 0.10 μm CMOS operating at room temperature

S. Inaba, Tomohisa Mizuno, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 14 citations

Engineering, Electrical Engineering, Circuit Theory +16

Performance fluctuations of 0.10 μm MOSFETs-limitation of 0.1 μm ULSIs

Tomohisa Mizuno, M. Iwase, H. Niiyama et al. · 2002 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +16