V. E. Zemlyakov - Concepedia

Author

V. E. Zemlyakov

Also Known As

V E Zemlyakov, V Zemlyakov, V. E. Zemlyakov, V. Zemlyakov, V.E. Zemlyakov, Valeriy E. Zemlyakov, Valery E. Zemlyakov, Valery Zemlyakov, Zemlyakov V. E., Zemlyakov, V. E.

Publications

355

Citations

H-Index

Concepts

All Affiliations

Ioffe Institute Institute of Microelectronics Technology and High Purity Materials Institute of Radio-Engineering and Electronics National Research University of Electronic Technology Institute for Physics of Microstructures

About

V. E. Zemlyakov is an author at Ioffe Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	146
2	Applied Physics	6	6	132
3	Electrical Engineering	6	6	132
4	Physics	2	2	45
5	Antenna	1	1	51

V. E. Zemlyakov

Publications

226

Citations

H-Index

Page 1

	Year	Citations
High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, Applied Physics Letters Electrical EngineeringTransistor ChannelsEngineeringTerahertz DetectionOrdered Transistors	2011	51
Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers Sergey N. Vainshtein, V. E. Zemlyakov, Andrey V. Maslevtsov, IEEE Transactions on Power Electronics PhotonicsElectrical EngineeringAdvanced Transistor ChipEngineeringRf Semiconductor	2018	29
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation V. E. Zemlyakov, Ya. M. Parnes, V. N. Vyuginov, Semiconductors	2016	26
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis A. F. Tsatsul’nikov, W. V. Lundin, E. E. Zavarin, Semiconductors	2016	17
Collapsing-field-domain-based 200 GHz solid-state source Sergey N. Vainshtein, Guoyong Duan, V. S. Yuferev, Applied Physics Letters Electrical EngineeringCfd CollapseCfd Travel DistanceEngineeringPhysics	2019	16
Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds P. N. Brunkov, A. A. Gutkin, M. É. Rudinsky, Semiconductors	2011	14
Integrated array of gas sensors R.G. Krystal, A. V. Medved, É. Verona, Electronics Letters EngineeringSt-cut Quartz SubstrateSensorsMicrofabricationIntegrated Array	1998	14
Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip V. V. Popov, D. M. Yermolaev, K. V. Maremyanin, Applied Physics Letters Electrical EngineeringTerahertz SpectroscopyUnbiased ModeEngineeringSingle Chip	2014	13
Terahertz detection in a slit-grating-gate field-effect-transistor structure D. M. Yermolayev, K.M. Marem’yanin, D. V. Fateev, Solid-State Electronics Electrical EngineeringEngineeringTerahertz DetectionNanoelectronicsApplied Physics	2012	13
Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate K. V. Maremyanin, D. M. Ermolaev, D. V. Fateev, Technical Physics Letters	2010	12

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