Guoyong Duan

Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter

Sergey N. Vainshtein, Guoyong Duan, A. V. Filimonov et al. · IEEE Transactions on Electron Devices · 2016 · 32 citations

Electrical Engineering, Engineering, Physics +12

Modified High-Power Nanosecond Marx Generator Prevents Destructive Current Filamentation

Guoyong Duan, Sergey N. Vainshtein, Juha Kostamovaara · IEEE Transactions on Power Electronics · 2016 · 30 citations

Electrical Engineering, Energy Harvesting, Engineering +12

Turn-on spread determines the size of the switching region in an avalanche transistor

Guoyong Duan, Sergey N. Vainshtein, Juha Kostamovaara · Applied Physics Letters · 2012 · 24 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Lateral Current Confinement Determines Silicon Avalanche Transistor Operation in Short-Pulsing Mode

Guoyong Duan, Sergey N. Vainshtein, Juha Kostamovaara · IEEE Transactions on Electron Devices · 2008 · 23 citations

Device Modeling, Electrical Engineering, Engineering +13

Three-dimensional peculiarities in an avalanche transistor provide a broadened range of amplitudes and durations of the generated pulses

Guoyong Duan, Sergey N. Vainshtein, Juha Kostamovaara · Applied Physics Letters · 2012 · 18 citations

Electrical Engineering, Engineering, Physics +9