Yuri Barsukov - Concepedia

Author

Yuri Barsukov

Samsung (South Korea)ORCID

Also Known As

Barsukov, Yuri, Yu V Barsukov, Yu. Barsukov, Yu. V. Barsukov, Yu.V. Barsukov, Yuri Barsukov, Yuri V. Barsukov

Publications

198

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Peter the Great St. Petersburg Polytechnic University Princeton Plasma Physics Laboratory University of Michigan

About

Yuri Barsukov is an author at Samsung (South Korea) specializing in applied physics, surface science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	128
2	Applied Physics	6	6	128
3	Chemistry	3	3	66
4	Natural Sciences	2	2	27
5	Chemical Engineering	2	2	65

Yuri Barsukov

Publications

147

Citations

H-Index

Page 1

	Year	Citations
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes Vladimir Volynets, Yuri Barsukov, Gonjun Kim, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Quantum Chemistry SimulationsEngineeringVacuum DeviceChemistrySilicon On Insulator	2020	39
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism Ji-Eun Jung, Yuri Barsukov, Vladimir Volynets, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Selective EtchingEngineeringVacuum DeviceSilicon On InsulatorPlasma Processing	2020	26
Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation Yuri Barsukov, Vladimir Volynets, Sangjun Lee, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Selective Sin/sio2Electrical EngineeringEngineeringPhysicsNonthermal Plasma	2017	22
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride Thorsten Lill, Mingmei Wang, Dong‐Jun Wu, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films	2024	19
Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation Yuri Barsukov, Vladimir Volynets, Anton Kobelev, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringChemistrySilicon On InsulatorEnhanced SiliconSemiconductors	2018	16
Boron trichloride plasma treatment effect on ohmic contact resistance formed on GaN-based epitaxial structure Anton Kobelev, Yuri Barsukov, N. A. Andrianov Journal of Physics Conference Series Materials ScienceBcl3 Plasma TreatmentElectrical EngineeringWide-bandgap SemiconductorEngineering	2015	14
Boron adatom adsorption on graphene: A case study in computational chemistry methods for surface interactions Sierra Jubin, Aaditya Rau, Yuri Barsukov, Frontiers in Physics EngineeringBoron Adatom AdsorptionComputational ChemistryChemistryMolecular Dynamics	2022	11

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