Yuri Barsukov

Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes

Vladimir Volynets, Yuri Barsukov, Gonjun Kim et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 39 citations · Full text

Quantum Chemistry Simulations, Engineering, Vacuum Device +18

Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism

Ji-Eun Jung, Yuri Barsukov, Vladimir Volynets et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 26 citations · Full text

Selective Etching, Engineering, Vacuum Device +20

Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

Yuri Barsukov, Vladimir Volynets, Sangjun Lee et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2017 · 22 citations

Selective Sin/sio2, Electrical Engineering, Engineering +14

Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride

Thorsten Lill, Mingmei Wang, Dong‐Jun Wu et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2024 · 19 citations · Full text

Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Yuri Barsukov, Vladimir Volynets, Anton Kobelev et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2018 · 16 citations

Engineering, Chemistry, Silicon On Insulator +21