Y. Miyanami

Novel Channel-Stress Enhancement Technology with eSiGe S/D and Recessed Channel on Damascene Gate Process

J. Wang, Y. Tateshita, Shuji Yamakawa et al. · 2007 · 27 citations

Engineering, Electrical Engineering, Electronic Materials +11

High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates

Y. Tateshita, J. Wang, K. Nagano et al. · 2006 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates

Satoru Mayuzumi, J. Wang, Shuji Yamakawa et al. · 2007 · 18 citations

Engineering, Electrical Engineering, Materials Science +13

Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor

Tetsuya Ikuta, Y. Miyanami, Shigeru Fujita et al. · Japanese Journal of Applied Physics · 2007 · 13 citations

Engineering, Materials Engineering, Materials Science +17