2006 · 25 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsStrain EngineeringCurrentsGate LeakageGate Leakage CurrentGate Oxide LeakageGate Oxide Leakage ReductionGate Stack EngineeringLeakage Current ReductionMetal Gate Electrodes
CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 uA/um at Vdd=1 V, Ioff= 100 nA/um and Tinv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 uA/um. These performances were realized under low gate leakage currents of 0.03 A/cm2 and below.