Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates

Abstract

Extreme high-performance n- and pFETs are achieved as 1300 and 1000 uA/um at Ioff = 100 nA/um and Vdd = 1.0 V, respectively, by applying newly proposed booster technologies. The combination of top-cut dual-stress liners and damascene gate remarkably enhances channel stress especially for shorter gate lengths. High-Ion pFETs with compressive stress liners and embedded SiGe source/drain are performed by using ALD-TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> damascene gate stacks with Tinv = 1.4 nm on (100) substrates. On the other hand, nFETs with tensile stress liners are obtained by using HfSi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> damascene gate stacks with Tinv =1.4 nm.