J. J. Wiczer

Minority-carrier diffusion lengths in GaP/GaAs<i>x</i>P1−<i>x</i> strained-layer superlattices

P. L. Gourley, R. M. Biefeld, T. E. Zipperian et al. · Applied Physics Letters · 1984 · 27 citations

Engineering, Materials Science, Physics +17

An ion-implanted Ga(AsP)/GaP strained-layer superlattice photodetector

David R. Myers, J. J. Wiczer, T. E. Zipperian et al. · IEEE Electron Device Letters · 1984 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes

J. J. Wiczer, L. R. Dawson, G. C. Osbourn et al. · IEEE Transactions on Nuclear Science · 1982 · 21 citations

Engineering, Electrical Engineering, Electronic Materials +16

Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectors

G. E. Bulman, David R. Myers, T. E. Zipperian et al. · Applied Physics Letters · 1985 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

Summary Abstract: High quality <i>p</i>–<i>n</i> junctions in InGaAs/GaAs strained-layer superlattices

L. R. Dawson, G. C. Osbourn, T. E. Zipperian et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 13 citations

Engineering, Materials Science, Physics +16