Donggun Park

High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability

Sung Dae Suk, Sung‐Young Lee, Sungmin Kim et al. · 2006 · 233 citations

Electrical Engineering, Saturation Currents, Engineering +13

Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

Kyoung Hwan Yeo, Sung Dae Suk, Ming Li et al. · 2006 · 197 citations

Gaa Tsnwfet, Electrical Engineering, Nm Gate Length +12

Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

Weon Wi Jang, Jeong Oen Lee, Jun‐Bo Yoon et al. · Applied Physics Letters · 2008 · 138 citations

Engineering, Nanoelectromechanical Switch, Electronic Devices +17

Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric

Donggun Park, Ya‐Chin King, Qiang Lu et al. · IEEE Electron Device Letters · 1998 · 102 citations

Electrical Engineering, Engineering, Mos Transistor +12

NEMS switch with 30nm-thick beam and 20nm-thick air-gap for high density non-volatile memory applications

Weon Wi Jang, Jun‐Bo Yoon, Min-Sang Kim et al. · Solid-State Electronics · 2008 · 101 citations

Non-volatile Memory, Electrical Engineering, Engineering +9