Concepedia

Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

Kyoung Hwan Yeo, Sung Dae Suk, Ming Li, Yun-young Yeoh, Keun Hwi Cho, Ki‐Ha Hong, Seong-Kyu Yun, Mong Sup Lee, Nammyun Cho, Kwanheum Lee,

2006 · 197 citations · 5 references

Abstract

GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation

References

5

5nm-gate nanowire FinFET

Fu-Liang Yang, Di-Hong Lee, Hou-Yu Chen et al. · 2004 · 249 citations

Engineering, Electrical Engineering, Microelectronics +16

High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability

Sung Dae Suk, Sung‐Young Lee, Sungmin Kim et al. · 2006 · 233 citations

Engineering, Electrical Engineering, Materials Science +17

An advanced low power, high performance, strained channel 65nm technology

S. Tyagi, C. Kenyon, S.-H. Lee et al. · 2005 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

S. Monfray, T. Skotnicki, Y. Morand et al. · 2003 · 58 citations

Engineering, Computer Engineering, Electrical Engineering +15

Observation of Single Electron Tunneling and Ballistic Transport in Twin Silicon Nanowire MOSFETs (TSNWFETs) Fabricated by Top-Down CMOS Process

Keun Hwi Cho, Sung Dae Suk, Yun Young Yeoh et al. · 2006 · 27 citations

Engineering, Electrical Engineering, Materials Science +17