Epitaxial growth of <i>β</i>-Ga2O3 by hot-wall MOCVD

D. Gogova, Misagh Ghezellou, Dat Q. Tran, +10

AIP Advances

Oxide HeterostructuresMaterials EngineeringMaterials ScienceHot-wall MocvdEngineering +11

Efficient combination of Roll-to-Roll compatible techniques towards the large area deposition of a polymer dielectric film and the solution-processing of an organic semiconductor for the field-effect transistors fabrication on plastic substrate

Christina Koutsiaki, T. Kaimakamis, Alexandros Zachariadis, +6

Organic Electronics

Materials ScienceConducting PolymerElectrical EngineeringEngineeringSemiconducting Polymer +9

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Alexis Papamichail, A. Kakanakova‐Georgieva, E.Ö. Sveinbjörnsson, +9

Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorHot-wall Mocvd +10

Organic transistors based on airbrushed small molecule-insulating polymer blends with mobilities exceeding 1 cm² V⁻¹ s⁻¹

T. Kaimakamis, Charalampos Pitsalidis, Alexis Papamichail, +2

RSC Advances

Materials ScienceOrganic Material ChemistryChemical EngineeringElectronic DevicesEngineering +9

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

Alexis Papamichail, Axel R. Persson, Steffen Richter, +8

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +13

Enhancement of P3HT:PCBM Photovoltaic Shells Efficiency Incorporating Core-shell Au@Ag Plasmonic Nanoparticles1

Lazaros Tzounis, C. Gravalidis, Alexis Papamichail, +1

Materials Today Proceedings

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

Hengfang Zhang, Ingemar Persson, Jr.-Tai Chen, +4

Crystal Growth & Design

Materials EngineeringMaterials ScienceAluminium NitridePolarity Control StrategyEngineering +13

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Hengfang Zhang, Ingemar Persson, Alexis Papamichail, +3

Journal of Applied Physics

Materials ScienceSemiconductorsPolarity DomainsAluminium NitrideEngineering +13

High-quality N-polar GaN optimization by multi-step temperature growth process

Hengfang Zhang, Tai C. Chen, Alexis Papamichail, +2

Journal of Crystal Growth

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Alexis Papamichail, Axel R. Persson, Steffen Richter, +7

Applied Physics Letters