Axel R. Persson

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind et al. · Nano Letters · 2017 · 97 citations · Full text

Independent Control of Nucleation and Layer Growth in Nanowires

Carina B. Maliakkal, Erik K. Mårtensson, Marcus Tornberg et al. · ACS Nano · 2020 · 52 citations · Full text

GaAsP Nanowires Grown by Aerotaxy

Wondwosen Metaferia, Axel R. Persson, Kilian Mergenthaler et al. · Nano Letters · 2016 · 42 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +12

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Olli‐Pekka Kilpi, Johannes Svensson, Jun Wu et al. · Nano Letters · 2017 · 42 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Epitaxial growth of <i>β</i>-Ga2O3 by hot-wall MOCVD

D. Gogova, Misagh Ghezellou, Dat Q. Tran et al. · AIP Advances · 2022 · 35 citations · Full text

Oxide Heterostructures, Materials Engineering, Materials Science +13