Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind, +6

Nano Letters

Independent Control of Nucleation and Layer Growth in Nanowires

Carina B. Maliakkal, Erik K. Mårtensson, Marcus Tornberg, +5

ACS Nano

GaAsP Nanowires Grown by Aerotaxy

Wondwosen Metaferia, Axel R. Persson, Kilian Mergenthaler, +8

Nano Letters

SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering +10

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Olli‐Pekka Kilpi, Johannes Svensson, Jun Wu, +4

Nano Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +8

Epitaxial growth of <i>β</i>-Ga2O3 by hot-wall MOCVD

D. Gogova, Misagh Ghezellou, Dat Q. Tran, +10

AIP Advances

Oxide HeterostructuresMaterials EngineeringMaterials ScienceHot-wall MocvdEngineering +11

High-Performance Vertical III-V Nanowire MOSFETs on Si With g_m &gt; 3 mS/μm

Olli‐Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, +4

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +12

Polymer‐Supported Palladium(II) Carbene Complexes: Catalytic Activity, Recyclability, and Selectivity in C−H Acetoxylation of Arenes

Maitham H. Majeed, Payam Shayesteh, Reine Wallenberg, +5

Chemistry - A European Journal

<i>In situ</i> XAS study of the local structure and oxidation state evolution of palladium in a reduced graphene oxide supported Pd(<scp>ii</scp>) carbene complex during an undirected C–H acetoxylation reaction

Ning Yuan, Maitham H. Majeed, Éva G. Bajnóczi, +8

Catalysis Science & Technology

Materials ScienceEngineeringCarbon-based MaterialBiochemistryCarbene Complex +8

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Abinaya Krishnaraja, Johannes Svensson, Elvedin Memišević, +5

ACS Applied Electronic Materials

Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering +13

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Alexis Papamichail, A. Kakanakova‐Georgieva, E.Ö. Sveinbjörnsson, +9

Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorHot-wall Mocvd +10