E. Hurt

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

K. M. Tracy, P. J. Hartlieb, S. Einfeldt et al. · Journal of Applied Physics · 2003 · 105 citations

Materials Science, Semiconductors, Electrical Engineering +15

Measurement of the band offsets of SiO2 on clean <i>n</i>- and <i>p</i>-type GaN(0001)

T. E. Cook, C. C. Fulton, Will Mecouch et al. · Journal of Applied Physics · 2003 · 100 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Sixty-percent-efficient miniature C-band vacuum power booster for the microwave power module

D.R. Whaley, C.M. Armstrong, B. Gannon et al. · IEEE Transactions on Plasma Science · 1998 · 32 citations

Low-power Electronics, Microwave Power Module, Electrical Engineering +14

Schottky barrier height and electron affinity of titanium on AlN

Brandon Ward, J. D. Hartman, E. Hurt et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 13 citations · Full text

Aluminium Nitride, Engineering, Solid-state Chemistry +16