Marta Perucchini

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Enrique G. Marín, Damiano Marian, Marta Perucchini et al. · ACS Nano · 2020 · 67 citations · Full text

Modeling of Electron Devices Based on 2-D Materials

Enrique G. Marín, Marta Perucchini, Damiano Marian et al. · IEEE Transactions on Electron Devices · 2018 · 43 citations · Full text

Engineering, Low Dimensional Material, Electronic Bandstructure +16

A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

Sheikh Aamir Ahsan, Shivendra Singh, Mehak Ashraf Mir et al. · IEEE Transactions on Electron Devices · 2021 · 20 citations · Full text

Categoryquantum Electronics, Engineering, Field-effect Transistors +18

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

Damiano Marian, Enrique G. Marín, Marta Perucchini et al. · Journal of Computational Electronics · 2023 · 17 citations · Full text

Nanotcad Vides, Engineering, Nanodevices +23

Impact of MoS₂ layer transfer on electrostatics of MoS₂/SiO₂ interface

V. V. Afanas’ev, Daniele Chiappe, Marta Perucchini et al. · Nanotechnology · 2018 · 13 citations · Full text