Sheikh Aamir Ahsan

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly et al. · IEEE Transactions on Electron Devices · 2018 · 157 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

Sheikh Aamir Ahsan, Sudip Ghosh, Khushboo Sharma et al. · IEEE Transactions on Electron Devices · 2015 · 99 citations

Engineering, Accurate Switching Behavior, Power Electronics +16

Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal et al. · IEEE Journal of the Electron Devices Society · 2017 · 94 citations · Full text

Device Modeling, Electrical Engineering, Engineering +13

Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

Sudip Ghosh, Sheikh Aamir Ahsan, Yogesh Singh Chauhan et al. · 2016 · 46 citations

Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications

Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal et al. · IEEE Transactions on Electron Devices · 2017 · 41 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17