Enrique G. Marín

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Enrique G. Marín, Damiano Marian, Marta Perucchini et al. · ACS Nano · 2020 · 67 citations · Full text

First-Principles Simulations of FETs Based on Two-Dimensional InSe

Enrique G. Marín, Damiano Marian, Giuseppe Iannaccone et al. · IEEE Electron Device Letters · 2018 · 48 citations · Full text

Device Modeling, Electrical Engineering, Performance Limits +14

Reconfigurable Diodes Based on Vertical WSe₂ Transistors with van der Waals Bonded Contacts

Ahmet Avşar, Kolyo Marinov, Enrique G. Marín et al. · Advanced Materials · 2018 · 44 citations · Full text

A New Holistic Model of 2-D Semiconductor FETs

Enrique G. Marín, Samuel James Bader, Debdeep Jena · IEEE Transactions on Electron Devices · 2018 · 43 citations

Device Modeling, Analytical Compact Model, Electrical Engineering +12

Modeling of Electron Devices Based on 2-D Materials

Enrique G. Marín, Marta Perucchini, Damiano Marian et al. · IEEE Transactions on Electron Devices · 2018 · 43 citations · Full text

Engineering, Low Dimensional Material, Electronic Bandstructure +16