Georg Brockt

Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials

Georg Brockt, Hubert Lakner · Micron · 2000 · 65 citations

Materials Science, Dielectric Function, Wide-bandgap Semiconductor +6

Investigations on Structural Properties of GaInN-GaN Multi Quantum Well Structures

F. Scholz, J. Off, E. Fehrenbacher et al. · physica status solidi (a) · 2000 · 26 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Structural Properties +13

MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

M. Heuken, Caspar von Eichel-Streiber, A. Behres et al. · Journal of Electronic Materials · 1997 · 19 citations

Engineering, Applied Physics, Movpe Growth +2

Electronic structure analysis of (In, Ga, Al) N heterostructures on the nanometre scale using EELS

Hubert Lakner, B. Rafferty, Georg Brockt · Journal of Microscopy · 1999 · 14 citations · Full text

Wide-bandgap Semiconductor, Local Electronic Structure, Nanometre Scale +19

Probing the local dielectric/optical properties of group III-Nitrides by spatially resolved EELS on the nanometer scale

Georg Brockt, Hubert Lakner · Materials Science and Engineering B · 1999 · 12 citations

Group Iii-nitrides, Aluminium Nitride, Nanoscale Science +11