A. Behres

Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

M. Behet, K. van der Zanden, G. Borghs et al. · Applied Physics Letters · 1998 · 51 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Characterization of MOVPE grown InPSb/InAs heterostructures

D. Drews, Andreas Schneider, T. Werninghaus et al. · Applied Surface Science · 1998 · 24 citations

Materials Science, Applied Physics, Engineering +1

InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

A. Joullié, El Mostafa Skouri, M. Garcia et al. · Applied Physics Letters · 2000 · 21 citations

Optical Materials, Engineering, Laser Science +19

MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

M. Heuken, Caspar von Eichel-Streiber, A. Behres et al. · Journal of Electronic Materials · 1997 · 19 citations

Engineering, Applied Physics, Movpe Growth +2

InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

P. Christol, P. Bigenwald, O. Gilard et al. · IEE Proceedings - Optoelectronics · 2000 · 16 citations

Semiconductors, Photonics, Engineering +13