Lisa Kong

In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs

Wenjie Lu, Young‐Hee Lee, Jonas C. Gertsch et al. · Nano Letters · 2019 · 43 citations

Engineering, Materials Engineering, Materials Science +17

First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD

Wenjie Lu, Young‐Hee Lee, Jessica A. Murdzek et al. · 2018 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch

Wenjie Lu, Ilpyo Roh, Dae‐Myeong Geum et al. · 2017 · 17 citations

Engineering, Electrical Engineering, Electronic Materials +11

Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation

Alon Vardi, Lisa Kong, Wenjie Lu et al. · 2017 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17