Shiyang Ji

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

Ryoji Kosugi, Shiyang Ji, Kazuhiro Mochizuki et al. · 2019 · 73 citations

Engineering, Power Electronics, Theoretical Limit +17

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Shiyang Ji, Kazutoshi Kojima, Yuuki Ishida et al. · Journal of Crystal Growth · 2013 · 39 citations

Materials Engineering, Materials Science, Engineering +7

Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Ryoji Kosugi, Shiyang Ji, Kazuhiro Mochizuki et al. · Japanese Journal of Applied Physics · 2017 · 31 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

Shiyang Ji, Kazutoshi Kojima, Ryoji Kosugi et al. · Applied Physics Express · 2015 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Shiyang Ji, Kazutoshi Kojima, Yuuki Ishida et al. · Materials science forum · 2013 · 24 citations

Materials Science, Semiconductors, Electrical Engineering +12