Yuhwan Ro

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · IEEE Journal of Solid-State Circuits · 2008 · 189 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications

Young-Cheon Kwon, Suk Han Lee, Jae‐Hoon Lee et al. · 2021 · 179 citations

Artificial Intelligence, Engineering, Emerging Memory Technology +17

Reducing memory access latency with asymmetric DRAM bank organizations

Young Hoon Son, O Seongil, Yuhwan Ro et al. · 2013 · 113 citations

Hardware Security, Random Access Latency, Engineering +14

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · 2007 · 79 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Aquabolt-XL: Samsung HBM2-PIM with in-memory processing for ML accelerators and beyond

Jin Hyun Kim, Shin-haeng Kang, Sukhan Lee et al. · 2021 · 53 citations

In-memory Processing, Memory Architecture, Engineering +14