Soonkon Kim

The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress

Hyojung Kim, Kiju Im, Jongwoo Park et al. · IEEE Electron Device Letters · 2020 · 26 citations

Engineering, Optoelectronic Devices, Thin Film Process Technology +21

New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production

Jong-Min Lee, Pyungho Choi, Soonkon Kim et al. · IEEE Transactions on Electron Devices · 2018 · 17 citations

Non-volatile Memory, Engineering, Defect Tolerance +17

A Study on the Charge Trapping Characteristics of High-k Laminated Traps

Jinhyuk Yoo, Soonkon Kim, Woojin Jeon et al. · IEEE Electron Device Letters · 2019 · 16 citations

High-k Laminated Traps, Engineering, Emerging Memory Technology +17

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

Hyojung Kim, Soonkon Kim, Jongmin Yoo et al. · AIP Advances · 2021 · 11 citations · Full text