W.B. Dubbelday

Salicidation process using NiSi and its device application

F. Deng, Rob Johnson, P.M. Asbeck et al. · Journal of Applied Physics · 1997 · 153 citations

Engineering, Education, Optoelectronic Devices +17

Photoluminescent thin-film porous silicon on sapphire

W.B. Dubbelday, Diane M. Szaflarski, Randy L. Shimabukuro et al. · Applied Physics Letters · 1993 · 26 citations

Materials Science, Chemical Engineering, Chemical Stain Etch +14

Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire

S.J. Mathew, Guofu Niu, W.B. Dubbelday et al. · IEEE Transactions on Electron Devices · 1999 · 18 citations

Electrical Engineering, Engineering, Physics +10

Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire

S.J. Mathew, Guofu Niu, W.B. Dubbelday et al. · 2002 · 18 citations

Electrical Engineering, Hole Confinement, Engineering +11

Structural investigation of self-aligned silicidation on separation by implantation oxygen

F. Deng, Ken Ring, Z. F. Guan et al. · Journal of Applied Physics · 1997 · 17 citations

Engineering, Thin Film Process Technology, Chemistry +20