Juan Salvador Rojas-Ramírez

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

Susmita Ghose, Shafiqur Rahman, Liang Hong et al. · Journal of Applied Physics · 2017 · 164 citations

Optical Materials, Engineering, β-Ga2o3 Thin Films +16

Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy

Susmita Ghose, Md. Shafiqur Rahman, Juan Salvador Rojas-Ramírez et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2016 · 64 citations

Materials Science, Oxide Heterostructures, Optical Materials +13

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos et al. · Applied Physics Letters · 2013 · 35 citations

Wide-bandgap Semiconductor, Engineering, Cm−2 Ev−1 +16

InAs FinFETs With H_finnm Fabricated Using a Top–Down Etch Process

R. Oxland, X. Li, S. W. Chang et al. · IEEE Electron Device Letters · 2016 · 26 citations

Structural, Optical, and Electrical Characterization of <i>β</i>‐Ga₂O₃ Thin Films Grown by Plasma‐Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Abraham Arias, N. Nedev, Susmita Ghose et al. · Advances in Materials Science and Engineering · 2018 · 24 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +19