P. Lysaght

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

G. Lucovsky, Hyungtak Seo, Sanghyun Lee et al. · Japanese Journal of Applied Physics · 2007 · 70 citations

Engineering, Materials Engineering, Materials Science +17

High-k gate stacks for planar, scaled CMOS integrated circuits

Howard R. Huff, C. Lim, Y. Kim et al. · Microelectronic Engineering · 2003 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +12

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, G. Gebara, M. B. Freiler et al. · 2002 · 61 citations

Engineering, Electrical Engineering, Materials Engineering +17

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

B.H. Lee, Chadwin D. Young, Rino Choi et al. · 2005 · 55 citations

Engineering, Electrical Engineering, Materials Science +14