J. Schmidt

Surface passivation of phosphorus‐diffused n⁺‐type emitters by plasma‐assisted atomic‐layer deposited Al₂O₃

Bram Hoex, M. C. M. van de Sanden, J. Schmidt et al. · physica status solidi (RRL) - Rapid Research Letters · 2011 · 74 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

V. V. Voronkov, R. Falster, Karsten Bothe et al. · Journal of Applied Physics · 2011 · 66 citations

Engineering, Materials Engineering, Materials Science +16

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

Fiacre Rougieux, Daniel Macdonald, A. Cuevas et al. · Journal of Applied Physics · 2010 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

The impact of dopant compensation on the boron–oxygen defect in p‐ and n‐type crystalline silicon

Daniel Macdonald, AnYao Liu, A. Cuevas et al. · physica status solidi (a) · 2010 · 29 citations

Engineering, Materials Science, Physics +17

Electronically stimulated degradation of silicon solar cells

J. Schmidt, Karsten Bothe, Daniel Macdonald et al. · Journal of materials research/Pratt's guide to venture capital sources · 2006 · 24 citations

Engineering, Electrical Engineering, Materials Science +12