Fiacre Rougieux

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

Daniel Macdonald, Fiacre Rougieux, A. Cuevas et al. · Journal of Applied Physics · 2009 · 131 citations · Full text

Electrical Engineering, Photoluminescence, Engineering +12

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Nicholas E. Grant, Jack Mullins, А. R. Peaker et al. · physica status solidi (RRL) - Rapid Research Letters · 2016 · 94 citations · Full text

Engineering, Optoelectronic Devices, Photoluminescence Imaging +19

Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

Hieu T. Nguyen, Fiacre Rougieux, Bernhard Mitchell et al. · Journal of Applied Physics · 2014 · 92 citations · Full text

Optical Materials, Engineering, Temperature Dependence +24

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Bianca Lim, Fiacre Rougieux, Daniel Macdonald et al. · Journal of Applied Physics · 2010 · 83 citations

Engineering, N-type Silicon, Chemistry +17

Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

Nicholas E. Grant, Jack Mullins, А. R. Peaker et al. · physica status solidi (a) · 2016 · 82 citations · Full text

Engineering, Integrated Circuits, Silicon On Insulator +17