F. Schienle

In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

E. Steimetz, J.‐T. Zettler, F. Schienle et al. · Applied Surface Science · 1996 · 36 citations

Materials Science, Ii-vi Semiconductor, Engineering +6

Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry

E. Steimetz, F. Schienle, J.‐T. Zettler et al. · Journal of Crystal Growth · 1997 · 31 citations

Engineering, Reflectance Anisotropy Spectroscopy, Optical Properties +12

High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices

Frank Dimroth, U. Schubert, F. Schienle et al. · Journal of Electronic Materials · 2000 · 19 citations

Materials Science, High C-doping, Electrical Engineering +8

BST thin films grown in a multiwafer MOCVD reactor

Fotios Fitsilis, S. Regnery, P. Ehrhart et al. · Journal of the European Ceramic Society · 2001 · 19 citations

Materials Engineering, Engineering, Applied Physics +4

Deposition of thin BST films in a multi-wafer planetary reactor

P. Ehrhart, Fotios Fitsilis, S. Regnery et al. · Integrated ferroelectrics · 2000 · 19 citations

Materials Science, Materials Engineering, Chemical Engineering +13