A.B. Danilin

Statistics

Publications

Citations

212

H-Index

Active since

1988

Affiliations

Institute of Microelectronics Technology and High Purity Materials(Current)

Helmholtz-Zentrum Dresden-Rossendorf

A.B. Danilin is an author at Institute of Microelectronics Technology and High Purity Materials specializing in materials science, materials engineering, and ion implantation.

Publications per year

1988–2016

Publications

Proximity gettering of transition metals in separation by implanted oxygen structures

W. Skorupa, N. Hatzopoulos, R.A. Yankov et al. · Applied Physics Letters · 1995 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +14

Wave-ordered structures formed on SOI wafers by reactive ion beams

V. K. Smirnov, D. S. Kibalov, S. A. Krivelevich et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 40 citations

Engineering, Materials Engineering, Materials Science +11

Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect

R. Kögler, R.A. Yankov, J.R. Kaschny et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1998 · 23 citations

Engineering, Materials Engineering, Materials Science +16

Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

A.B. Danilin, K.A. Drakin, V.V. Kukin et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +17

Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment

Evgenij Potapov, V. K. Smirnov, A.B. Danilin · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 15 citations

Engineering, Materials Engineering, Materials Science +14

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