J.R. Kaschny - Concepedia

Author

J.R. Kaschny

Universidade Federal do Rio Grande do Sul ORCID

Also Known As

J R Kaschny, J. Kaschny, J. R. Kaschny, J.R Kaschny, J.R. Kaschny, Jorge Kaschny, Jorge R Kaschny, Jorge R. Kaschny

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Universidade Federal do Rio Grande do Sul Helmholtz-Zentrum Dresden-Rossendorf Instituto Federal da Bahia Universidade Estadual de Feira de Santana Universidade Federal da Paraíba

About

J.R. Kaschny is an author at Universidade Federal do Rio Grande do Sul specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	27	696
2	Applied Physics	13	26	671
3	Chemistry	2	2	24
4	Health Sciences	1	1	14
5	Natural Sciences	1	1	49

J.R. Kaschny

Publications

933

Citations

H-Index

Page 1

	Year	Citations
A theoretical investigation of defects in a boron nitride monolayer S. Azevedo, J.R. Kaschny, C.M.C. de Castilho, Nanotechnology	2007	175
Electronic structure of defects in a boron nitride monolayer S. Azevedo, J.R. Kaschny, C.M.C. de Castilho, The European Physical Journal B Boron NitrideEngineeringPhysicsHexagonal Boron NitrideApplied Physics	2009	164
Overpressurized bubbles versus voids formed in helium implanted and annealed silicon P.F.P. Fichtner, J.R. Kaschny, R.A. Yankov, Applied Physics Letters Materials EngineeringMaterials ScienceIon ImplantationBubble DynamicEngineering	1997	71
Stability and electronic structure of B<sub><i>x</i></sub>N<sub><i>y</i></sub>C<sub><i>z</i></sub>nanotubes S. Azevedo, Rodrigo de Almeida Paiva, J.R. Kaschny Journal of Physics Condensed Matter EngineeringElectronic PropertiesElectronic StructureBoron NitrideHexagonal Boron Nitride	2006	49
The effects of the annealing temperature on the formation of helium-filled structures in silicon P.F.P. Fichtner, J.R. Kaschny, M. Behar, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter Physics	1999	40
Range and thermal-behavior studies of Au and Bi implanted into photoresist films M. Behar, P. L. Grande, L. Amaral, Physical review. B, Condensed matter EngineeringMaterial InnovationIon ImplantationOptical PropertiesIon Beam	1990	34
Nucleation and growth of platelet bubble structures in He implanted silicon P.F.P. Fichtner, J.R. Kaschny, A. Kling, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringMicrofabricationApplied Physics	1998	33
Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry W. Fukarek, J.R. Kaschny Journal of Applied Physics Materials ScienceIon ImplantationEngineeringCrystalline DefectsSurface Science	1999	27
Facility for simultaneous dual-beam ion implantation J.R. Kaschny, R. Kögler, H. Tyrrof, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Ion BeamIon ImplantationInstrumentation	2005	26
On the structural properties of B–C–N nanotubes Matheus J. S. Matos, S. Azevedo, J.R. Kaschny Solid State Communications Materials ScienceStructural PropertiesBoron NitrideEngineeringNanomaterials	2008	24

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