Z.C. Feng - Concepedia

Author

Z.C. Feng

Institute of Materials Research and Engineering ORCID

Also Known As

Z. C. Feng, Z.C Feng, Z.C. Feng, Zewu Feng, Zhangyu Feng, Zhe Chua Feng, Zixuan Feng

Publications

525

Citations

H-Index

Concepts

All Affiliations

Institute of Materials Research and Engineering National University of Singapore National Taiwan Normal University City University of New York

About

Z.C. Feng is an author at Institute of Materials Research and Engineering specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	314
2	Applied Physics	9	9	262
3	Electrical Engineering	4	4	83
4	Chemical Engineering	1	1	52
5	Chemistry	1	1	52

Z.C. Feng

Publications

332

Citations

H-Index

Page 1

	Year	Citations
Temperature dependence of Raman scattering in hexagonal gallium nitride films W. S. Li, Zexiang Shen, Z.C. Feng, Journal of Applied Physics Materials ScienceAluminium NitrideEngineeringPhysicsOptical Properties	2000	116
Organocatalytic Aerobic Oxidative Degradation of Polystyrene to Aromatic Acids Albert Ong, Jerald Y. Q. Teo, Z.C. Feng, ACS Sustainable Chemistry & Engineering Chemical EngineeringDifferent Polystyrene DerivativesEngineeringDegradable PlasticNovel Organocatalysts	2023	52
Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance Wojciech Krystek, Fred H. Pollak, Z.C. Feng, Applied Physics Letters Wide-bandgap SemiconductorEngineeringContactless ElectroreflectanceSemiconductor DeviceNanoelectronics	1998	30
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN D. G. Chtchekine, Z.C. Feng, S. J. Chua, Physical review. B, Condensed matter SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineering	2001	23
Waveguide study and refractive indices of GaN:Mg epitaxial film H. Y. Zhang, M. Schurman, Z.C. Feng, Optics Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsOptical Properties	1996	19
Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N L. Malikova, Y. S. Huang, Fred H. Pollak, Solid State Communications EngineeringPhysicsApplied PhysicsQuantum MaterialsCondensed Matter Physics	1997	19
Preferred Parallel Alignment of Sulfonamide Enables High‐performance Inverted Perovskite Solar Cells Hailong Huang, Yansen Guo, Wei Wang, Advanced Materials	2025	18
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates Z.C. Feng, T. Yang, Yunfei Hou Materials Science in Semiconductor Processing Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringOptical Properties	2001	15
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures Jiade Chen, Z.C. Feng, J.C. Wang, Journal of Crystal Growth Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringPhysics	2006	15
Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition Z.C. Feng, X. Zhang, S. J. Chua, Thin Solid Films Materials ScienceWide-bandgap SemiconductorStructural PropertiesEngineeringApplied Physics	2002	14

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