D. G. Chtchekine

Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

D. G. Chtchekine, L. P. Fu, G. D. Gilliland et al. · Journal of Applied Physics · 1997 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN

D. G. Chtchekine, Z.C. Feng, S. J. Chua et al. · Physical review. B, Condensed matter · 2001 · 23 citations

Engineering, Materials Engineering, Materials Science +17

Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)

Y. Bu, M. C. Lin, L. P. Fu et al. · Applied Physics Letters · 1995 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

Donor-hydrogen bound exciton in epitaxial GaN

D. G. Chtchekine, Zhe Chuan Feng, G. D. Gilliland et al. · Physical review. B, Condensed matter · 1999 · 17 citations

Engineering, Materials Engineering, Materials Science +12