L. P. Fu

Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

D. G. Chtchekine, L. P. Fu, G. D. Gilliland et al. · Journal of Applied Physics · 1997 · 25 citations

Optical Materials, High-quality Gan Films, Engineering +16

Exciton transport and nonradiative decay in semiconductor nanostructures

I. N. Krivorotov, Tsun‐Kuo Chang, G. D. Gilliland et al. · Physical review. B, Condensed matter · 1998 · 24 citations

Semiconductors, Quantum Science, Decay Kinetics +14

Sorption of helium by fullerite crystals and films

C. P. Chen, S. Mehta, L. P. Fu et al. · Physical Review Letters · 1993 · 23 citations

Engineering, Raman Measurements, Solid-state Chemistry +17

Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)

Y. Bu, M. C. Lin, L. P. Fu et al. · Applied Physics Letters · 1995 · 19 citations

Materials Science, Semiconductors, Optical Materials +15

Continous wave Nd:YAG laser deposition of CdS thin films

Xing W. Wang, F. Spitulnik, B Campell et al. · Thin Solid Films · 1992 · 18 citations

Optical Materials, Engineering, Optical Properties +6