G. D. Gilliland - Concepedia

Author

G. D. Gilliland

Emory University

Also Known As

G Gilliland, G. D. Gilliland, G.D. Gilliland

Publications

545

Citations

H-Index

Concepts

All Affiliations

Emory University IBM Research - Thomas J. Watson Research Center Sandia National Laboratories Iowa State University Institute of Materials Research and Engineering

About

G. D. Gilliland is an author at Emory University specializing in engineering, applied physics, and semiconductors.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	447
2	Applied Physics	13	14	447
3	Electrical Engineering	5	5	89
4	Chemical Engineering	1	1	25
5	Chemistry	1	1	19

G. D. Gilliland

Publications

447

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence spectroscopy of crystalline semiconductors G. D. Gilliland Materials Science and Engineering R Reports SemiconductorsPhotoluminescenceEngineeringApplied PhysicsPhotoluminescence Spectroscopy	1997	112
Photoluminescence spectroscopy of crystalline semiconductors G. D. Gilliland Materials Science and Engineering R Reports SemiconductorsPhotoluminescenceEngineeringApplied PhysicsPhotoluminescence Spectroscopy	1997	77
Intrinsic recombination and interface characterization in ‘‘surface-free’’ GaAs structures D. J. Wolford, G. D. Gilliland, T. F. Kuech, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceSemiconductor TechnologyOptical MaterialsEngineering	1991	35
Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices G. D. Gilliland, Alex Antonelli, D. J. Wolford, Physical Review Letters Kinetics ResultsQuantum ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineering	1993	34
Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3) D. G. Chtchekine, L. P. Fu, G. D. Gilliland, Journal of Applied Physics Optical MaterialsHigh-quality Gan FilmsEngineeringGan FilmsSemiconductors	1997	25
Exciton transport and nonradiative decay in semiconductor nanostructures I. N. Krivorotov, Tsun‐Kuo Chang, G. D. Gilliland, Physical review. B, Condensed matter SemiconductorsQuantum ScienceDecay KineticsIi-vi SemiconductorEngineering	1998	24
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN D. G. Chtchekine, Z.C. Feng, S. J. Chua, Physical review. B, Condensed matter SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineering	2001	23
Minority-carrier recombination kinetics and transport in ‘‘surface-free’’ GaAs/Al<i>x</i>Ga1−<i>x</i>As double heterostructures G. D. Gilliland, D. J. Wolford, T. F. Kuech, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringGaas Layer ThicknessOptoelectronic Devices	1993	22
Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3) Y. Bu, M. C. Lin, L. P. Fu, Applied Physics Letters Materials ScienceSemiconductorsOptical MaterialsEngineeringGrowth Technique	1995	19
Donor-hydrogen bound exciton in epitaxial GaN D. G. Chtchekine, Zhe Chuan Feng, G. D. Gilliland, Physical review. B, Condensed matter SemiconductorsWide-bandgap SemiconductorElectrical EngineeringDonor-hydrogen Bound ExcitonEngineering	1999	17

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