Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance

Abstract

Using contactless electroreflectance at room temperature, we have nondestructively evaluated the band bending (carrier-type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the InGaN/GaN interface of samples of epitaxial InGaN, having average n- and p-type character, grown on top of thick GaN epilayers/sapphire.