Juraj Marek - Concepedia

Author

Juraj Marek

Slovak University of Technology in Bratislava ORCID

Also Known As

J Marek, J. Marek, J. R. Marek, Juraj Marek, Marek Juraj

114

Publications

422

Citations

H-Index

Concepts

All Affiliations

Slovak University of Technology in Bratislava Slovak Academy of Sciences Institute of Electrical Engineering of the Slovak Academy of Sciences

About

Juraj Marek is an author at Slovak University of Technology in Bratislava specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	259
2	Electrical Engineering	12	13	259
3	Applied Physics	10	10	169
4	Computer Engineering	3	3	90
5	Materials Engineering	1	1	19

Juraj Marek

Publications

281

Citations

H-Index

Page 1

	Year	Citations
Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs Aleš Chvála, D. Donoval, A. Šatka, IEEE Transactions on Electron Devices Device ModelingFinite Element MethodElectrical EngineeringEngineeringPower Device	2015	37
Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations Juraj Marek, Aleš Chvála, D. Donoval, Solid-State Electronics Device ModelingElectrical EngineeringPower MosfetEngineeringCompact Model	2014	31
Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction Aleš Chvála, D. Donoval, Juraj Marek, IEEE Transactions on Electron Devices EngineeringRelaxation MethodPower Electronic SystemsPower ElectronicsHspice Interaction	2014	26
Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour D. Donoval, A. Vrbicky, Juraj Marek, Solid-State Electronics Device ModelingElectrical EngineeringPower Dmos TransistorEngineeringSemiconductor Device	2008	22
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation Aleš Chvála, Juraj Marek, Patrik Príbytný, Microelectronics Reliability EngineeringPower ElectronicsSemiconductor DeviceAdvanced Packaging (Semiconductors)High Voltage Engineering	2017	21
Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors Marián Molnár, D. Donoval, J. Kuzmı́k, Applied Surface Science Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2014	19
Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties Aleš Chvála, Juraj Marek, Patrik Príbytný, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringDevice ModelingEngineering	2016	19
Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells Miroslav Mikolášek, Patrik Príbytný, D. Donoval, Applied Surface Science Electrical EngineeringEngineeringInterface RecombinationOrganic Solar CellBuffer Layer	2014	16
Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al<sub>2</sub>O<sub>3</sub>and ZrO<sub>2</sub>gate insulator R. Stoklas, D. Gregušová, K. Hušeková, Semiconductor Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringAlgan/gan Metal-oxide-semiconductor StructuresEngineering	2014	15
Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation Aleš Chvála, Róbert Szobolovszký, Jaroslav Kováč, Journal of Electronic Packaging EngineeringPower ElectronicsElectronic DevicesActive TransistorElectronic Packaging	2019	15

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