Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction

Abstract

Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model simulation and a direct method with an equivalent thermal 3-D <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$RC$</tex></formula> network. The features and limitations of the methods are analyzed and presented. The designed electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3-D devices. A power vertical superjunction MOSFET under an unclamped inductive switching test of device robustness is used to perform validation of the designed electrothermal simulation.