B. F. Phillips

Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities

H.L. Hughes, R. D. Baxter, B. F. Phillips · IEEE Transactions on Nuclear Science · 1972 · 104 citations

Oxide Impurities, Electrical Engineering, Ion Implantation +15

Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beam

Wilfried Vandervorst, F. R. Shepherd, J. H. Newman et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 41 citations

Engineering, Ion Beam Instrumentation, Beam Optic +19

The impact of surface analysis technology on the development of semiconductor wafer cleaning processes

B. F. Phillips, Don C. Burkman, W. Schmidt et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1983 · 27 citations

Engineering, Integrated Circuits, Chemistry +21

Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopy

L. P. Erickson, B. F. Phillips · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 16 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +10

SIMS investigation of very shallow implanted Si layers

F. R. Shepherd, William H. Robinson, J. D. Brown et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1983 · 14 citations

Engineering, Ion Beam Instrumentation, Integrated Circuits +18