Evan Lobisser

130nm InP DHBTs with ft >0.52THz and f_max >1.1THz

Miguel Urteaga, R.L. Pierson, Petra Rowell et al. · 2011 · 103 citations

Engineering, Electrical Engineering, Materials Science +13

InP HBTs for THz frequency integrated circuits

Miguel Urteaga, Munkyo Seo, J.B. Hacker et al. · 2011 · 30 citations

Engineering, Electrical Engineering, Materials Science +14

<i>Ex situ</i> Ohmic contacts to n-InGaAs

Ashish Baraskar, Mark A. Wistey, Vibhor Jain et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

1.0 THz f_max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Vibhor Jain, Johann C. Rode, Han‐Wei Chiang et al. · 2011 · 20 citations

Engineering, Electrical Engineering, Physics +14

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$

Vibhor Jain, Evan Lobisser, Ashish Baraskar et al. · IEEE Electron Device Letters · 2010 · 19 citations

Engineering, Electrical Engineering, Materials Science +17