J. Foerstner

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

H.C. Shin, Ik-Sung Lim, M. Racanelli et al. · IEEE Transactions on Electron Devices · 1996 · 56 citations

Device Modeling, Materials Engineering, Electrical Engineering +15

MOSAIC V-a very high performance bipolar technology

V. dela Torre, J. Foerstner, B. Lojek et al. · 2002 · 36 citations

Engineering, Vlsi Design, Computer Architecture +16

Comparison of Soi Versus Bulk Silicon Substrate Crosstalk Properties for Mixed-Mode IC's

M. K. A. Rahim, Bor-Yuan Hwang, J. Foerstner · 2005 · 29 citations

3D Ic Architecture, Electrical Engineering, Engineering +9

TFSOI complementary BiCMOS technology for low power applications

K. Klein, M.G. Grimaldi, M. Racanelli et al. · IEEE Transactions on Electron Devices · 1995 · 28 citations

Low Power Applications, Engineering, Vlsi Design +17

Measurement of carrier generation lifetime in SOI devices

Hyungcheol Shin, M. Racanelli, W.M. Huang et al. · Solid-State Electronics · 1999 · 24 citations

Electrical Engineering, Engineering, Hardware Reliability +7