L. C. Kimerling - Concepedia

Author

L. C. Kimerling

Also Known As

Kimerling, L. C, L C Kimerling, L. C. KIMERLING, L. C. Kimerling, L. Kimerling, L.C Kimerling, L.C. KIMERLING, L.C. Kimerling

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Massachusetts Institute of Technology Nokia (United States)Mathematical Sciences Research Institute Roma Tre University

About

L. C. Kimerling is an author at AT&T (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	25	1.2K
2	Applied Physics	17	24	1.2K
3	Chemistry	4	4	302
4	Natural Sciences	3	3	84
5	Chemical Engineering	1	1	26

L. C. Kimerling

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates Lorenzo Colace, G. Masini, Gaetano Assanto, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductors	2000	232
Diffusivity of oxygen in silicon at the donor formation temperature Michael Stavola, J. R. Patel, L. C. Kimerling, Applied Physics Letters °C Heat TreatmentEngineeringOxidation ResistanceChemistrySilicon On Insulator	1983	216
Interstitial defect reactions in silicon M. T. Asom, J. L. Benton, R. Sauer, Applied Physics Letters Materials ScienceRoom-temperature Electron IrradiationEngineeringPhysicsNanoelectronics	1987	146
Electronically controlled reactions of interstitial iron in silicon L. C. Kimerling, J. L. Benton Physica B+C	1983	140
Defects in semiconductors - 1982 L. C. Kimerling Physica B+C SemiconductorsElectrical EngineeringEngineeringApplied PhysicsQuantum Materials	1983	66
Influence of Oxygen and Boron on Defect Production in Irradiated Silicon P. J. Drevinsky, Charlene E. Caefer, S. P. Tobin, MRS Proceedings Materials ScienceIrradiated SiliconEngineeringCrystalline DefectsApplied Physics	1987	59
Epitaxially stabilized GexSn1−x diamond cubic alloys Eugene A. Fitzgerald, P. E. Freeland, M. T. Asom, Journal of Electronic Materials Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyApplied Physics	1991	43
The oxygen related donor effect in silicon J. L. Benton, L. C. Kimerling, Michael Stavola Physica B+C EngineeringSurface ScienceApplied PhysicsSiliceneChemistry	1983	43
Metastable<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>M</mml:mi></mml:math>center in InP: Defect-charge-state—controlled structural relaxation M. Levinson, Michael Stavola, J. L. Benton, Physical review. B, Condensed matter Ii-vi SemiconductorMath XmlnsRelaxation ProcessOptical MaterialsDistinct Electronic Properties	1983	43
Structure and stability of metastable α-Sn M. T. Asom, A. R. Kortan, L. C. Kimerling, Applied Physics Letters Crystal StructureEngineeringCrystal Growth TechnologyMolecular BiologyElectron Microscopy	1989	41

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