Interstitial defect reactions in silicon

Abstract

Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The Cs-Ci, ME[(0.10), (0.17)] and Ps-Ci, ME[(0.21), (0.23), (0.27), (0.30)] defects exhibit metastable structural transformations. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.