Electronically controlled reactions of interstitial iron in silicon

Abstract

The association and dissociation reactions of the interstitial iron-substitutional boron pair (FeiBs) in silicon have been studied by capacitance transient techniques. Electronic mechanisms play a role in both reactions. The deep donor state of (Fei), H(0.46), is critical to the phenomena by providing 1) a charge state controlled ion pair relaxation process, and 2) charge localization and electron-phonon coupling which support the recombination enhanced motion of (Fei). The projected lattice potentials experienced by (Fei+) in the vicinity of (Bs-) are derived from the reaction kinetics.