Electronically controlled reactions of interstitial iron in silicon

Abstract

The association and dissociation reactions of the interstitial iron-substitutional boron pair ( Fe i B s ) in silicon have been studied by capacitance transient techniques. Electronic mechanisms play a role in both reactions. The deep donor state of ( Fe i ), H(0.46), is critical to the phenomena by providing 1) a charge state controlled ion pair relaxation process, and 2) charge localization and electron-phonon coupling which support the recombination enhanced motion of ( Fe i ). The projected lattice potentials experienced by ( Fe i + ) in the vicinity of ( B s - ) are derived from the reaction kinetics.