Diffusivity of oxygen in silicon at the donor formation temperature

Abstract

We present data on oxygen diffusivity in silicon for the temperature range 270–400 °C. The diffusivity is determined from the recovery kinetics of a stress induced dichroism in the 9-μm oxygen infrared absorption band. We combine our data for well dispersed oxygen (i.e., crystals heat treated at 1350 °C for 20 h), with Mikkelsen’s recent mass transport work at higher temperature to obtain the diffusivity, D=0.17 exp (−2.54/kT), for the range 330–1240 °C. We have also found that the oxygen atomic hopping times can be as much as 100 times faster in crystals that have not received the 1350 °C heat treatment.