Zhangyi’an Yuan - Concepedia

Author

Zhangyi’an Yuan

University of Electronic Science and Technology of China ORCID

Also Known As

Zhang-Yi'an Yuan, Zhang-Yi-An Yuan, ZhangYi'an Yuan, Zhangyi'an Yuan, Zhangyi’an Yuan

Publications

205

Citations

H-Index

Concepts

All Affiliations

University of Electronic Science and Technology of China Harbin Institute of Technology National Engineering Research Center of Electromagnetic Radiation Control Materials Beijing Microelectronics Technology Institute Vanderbilt University

About

Zhangyi’an Yuan is an author at University of Electronic Science and Technology of China specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	132
2	Electrical Engineering	6	6	132
3	Microelectronics	6	6	132
4	Applied Physics	5	5	107
5	Physics	1	1	19

Zhangyi’an Yuan

Publications

165

Citations

H-Index

Page 1

	Year	Citations
Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS Xin Zhou, Zhangyi’an Yuan, Lei Shu, IEEE Electron Device Letters Electrical EngineeringIon ImplantationEngineeringHigh-voltage Soi LdmosTid Radiation	2019	32
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs Lei Shu, Liang Wang, Xin Zhou, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringTotal Ionizing DoseEngineeringSemiconductor Device	2019	25
Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS Xin Zhou, Lingfang Zhang, Ming Qiao, Electrical EngineeringIon ImplantationEngineeringSemiconductor DeviceNanoelectronics	2018	20
Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID Lei Shu, Yuanfu Zhao, K.F. Galloway, IEEE Transactions on Nuclear Science	2020	20
A Novel Ultralow <i>R</i> <sub>ON,sp</sub> Triple RESURF LDMOS With Sandwich n-p-n Layer Ming Qiao, Yi Li, Zhangyi’an Yuan, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringNttr Ldmos	2020	20
Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS Zhangyi’an Yuan, Ming Qiao, Xinjian Li, IEEE Transactions on Electron Devices Postirradiation Device BehaviorEngineeringPostirradiation Electrical CharacteristicsSemiconductor DeviceIon Implantation	2021	19
Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS With Sandwich N-P-N Layer: Toward High-Performance and High-Reliability Ming Qiao, Zhangyi’an Yuan, Li Yi, EngineeringEnergy EfficiencyTriple Resurf LdmosAdvanced Packaging (Semiconductors)High Voltage Engineering	2020	16
Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS Xin Zhou, Zhixuan Li, Zhangyi’an Yuan, IEEE Transactions on Electron Devices	2021	13

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