Zhangyi’an Yuan

Publications

165

Citations

H-Index

2018

Active since

Affiliations

University of Electronic Science and Technology of China(Current)

Harbin Institute of Technology

National Engineering Research Center of Electromagnetic Radiation Control Materials

Beijing Microelectronics Technology Institute

Vanderbilt University

Zhangyi’an Yuan is an author at University of Electronic Science and Technology of China specializing in microelectronics, engineering, and electrical engineering.

ORCID

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsElectrical InsulationNanoelectronicsElectronic PackagingDevice ModelingElectronic EngineeringHigh Voltage Engineering

Publications per year

2018–2021

Publications

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

Xin Zhou, Zhangyi’an Yuan, Lei Shu et al. · IEEE Electron Device Letters · 2019 · 32 citations

Electrical Engineering, Ion Implantation, Engineering +10

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

Lei Shu, Liang Wang, Xin Zhou et al. · IEEE Transactions on Nuclear Science · 2019 · 25 citations

Device Modeling, Electrical Engineering, Total Ionizing Dose +13

Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS

Xin Zhou, Lingfang Zhang, Ming Qiao et al. · 2018 · 20 citations

Electrical Engineering, Ion Implantation, Engineering +12

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Lei Shu, Yuanfu Zhao, K.F. Galloway et al. · IEEE Transactions on Nuclear Science · 2020 · 20 citations

A Novel Ultralow <i>R</i> <sub>ON,sp</sub> Triple RESURF LDMOS With Sandwich n-p-n Layer

Ming Qiao, Yi Li, Zhangyi’an Yuan et al. · IEEE Transactions on Electron Devices · 2020 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12

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