Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Abstract

Recently, Shu et al. published “Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.” This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.