D.W. DiSanto

At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

D.W. DiSanto, C. R. Bolognesi · IEEE Transactions on Electron Devices · 2006 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Hassan Maher, D.W. DiSanto, G. Soerensen et al. · Applied Physics Letters · 2000 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

D.W. DiSanto, Haifeng Sun, C. R. Bolognesi · Applied Physics Letters · 2006 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs

C. R. Bolognesi, Andy C. C. Kwan, D.W. DiSanto · 2003 · 14 citations

Engineering, Electrical Engineering, Materials Science +13

Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs

D.W. DiSanto, C. R. Bolognesi · Electronics Letters · 2005 · 12 citations

Engineering, Electrical Engineering, Materials Science +17