Long Chen

Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

Lei Liao, Hong Jin Fan, Bin Yan et al. · ACS Nano · 2009 · 97 citations

1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer

Xiangdong Li, Junbo Wang, Jincheng Zhang et al. · IEEE Electron Device Letters · 2023 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

Hang Liao, Zheyang Zheng, Tao Chen et al. · IEEE Electron Device Letters · 2022 · 28 citations

p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics

Zhanfei Han, Xiangdong Li, Jian Ji et al. · IEEE Electron Device Letters · 2024 · 22 citations · Full text

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

Xiangdong Li, Jie Zhang, Jian Ji et al. · IEEE Transactions on Electron Devices · 2024 · 21 citations